Methods | |||||||
CVD - VPE - ALD - VPD
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Types | ||||||
Processes | |||||||
TYPES OF SURFACE TREATMENTS |
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Acronym | Description | Notes | |||||
PVD | Physical Vapour Deposition |
with gas in molecular regime (Kn>1). |
TE | Thermal Evaporation | Evaporazione Termica (Galileo-type) | Effetto Joule | |
CAD | Cathodic Arc Deposition | Evaporazione ad Arco | Arco Elettrico | ||||
E-beam | Electron-beam Evaporation | Cannone Elettronico | Elettroni | ||||
IBAD | Ion Beam Assisted Deposition | Ion Beam Assisted Deposition | Ioni | ||||
Sputtering | Sputtering | Sputtering | Plasma | ||||
LA | Laser Ablation | Ablazione Laser | Laser | ||||
CVD | Chemical Vapour Deposition |
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AcCVD | Actuvation Chemical Vapour Deposition |
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MoCVD | Metallorganic |
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SaCVD | Saline Chemical Vapour Deposition |
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ALD | Atomic Layer Deposition | ||||||
VPE | Vapour Phase Epitaxy | The conditions are the same as in CVD, but the growth is Epitaxial |
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VPD | Vapour Phase Deposition | ||||||
MBE | Molecular Beam Epitaxy |
Epitaxial growth in ultra-high vacuum, (UHV=10^-7-->10^-11 mbar) with the gas in molecular regime (Kn>1). |
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